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ZXMP6A18DN8
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Notes 7 & 9)
Symbol
V DSS
V GS
Value
-60
? 20
-4.8
Unit
V
V
Continuous Drain Current (V GS = 10V)
T A = +70oC
(Notes 7 & 9)
I D
-3.8
A
(Notes 6 & 9)
-3.7
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Single Pulsed Avalanche Energy (L = 0.1mH)
Single Pulsed Avalanche Current (L = 0.1mH)
(Notes 8)
(Notes 7)
(Notes 8)
(Note 11)
(Note 11)
I DM
I S
I SM
E AS
I AS
-23
-3.3
-23
38.2
27.6
A
A
A
mJ
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 9)
Symbol
Value
1.25
10
Unit
Power Dissipation
Linear Derating Factor
(Notes 6 & 10)
P D
1.8
14
W
mW/°C
(Notes 7 & 9)
(Notes 6 & 9)
2.1
17
100
Thermal Resistance, Junction to Ambient
(Notes 7 & 10)
R θ JA
69
°C/W
(Notes 7 & 9)
58
Operating and Storage Temperature Range
T J , T STG
-55 to +150
°C
Notes:
6. For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 1oz copper in still air conditions.
7. For a dual device surface mounted FR4 PCB measured at t ? 10 sec.
8. Repetitive rating 25mm x 25mm x 1.6mm FR4 PCB, D = 0.02, pulse width = 300μs – pulse width limited by maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. IAR and EAR rating are based on low frequency and duty cycles to keep T J = +25°C
ZXMP6A18DN8
Document Number DS33592 Rev 2 - 2
2 of 8
www.diodes.com
October 2013
? Diodes Incorporated
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